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IGBT 的Max. power dissipation是如何计算的?
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我看IGBT (2MBI150N-120)的DATASHEET,它的Collector-Emitter voltage,VCES=1200V,Collector CURRENT=150A,Max. power dissipation PC=1100W,这1100W是如何计算出来的? |
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发表于 23-5-2008 04:25 PM
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从datasheet里得知,
Max junction temperature = 150oC 当 case temperature = 25oC时。
又junction to case resistance = 0.11oC/W 当 case temperature = 25oC时。
Pd = (Tjmax-Tc)/Rjc
= (150-25) / 0.11
= 1136.363636 W
制造商为了keep margin for spec,他们就放1100W. (猜的,详情要问制造商) |
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